![]() In contrast to silicon, III–V materials have excellent light-emitting properties. The lack of an effective integrated light source has long restricted the development of silicon-based integrated photonic technology. However, because silicon is an indirect-bandgap semiconductor, its luminescence performance is poor due to the simultaneous existence of free-carrier absorption, Auger recombination, and indirect recombination during the carrier transition process, resulting in very weak photon emission. This allows large-scale photonic device production at a low cost, providing a highly valued platform for optical interconnects. ![]() In addition, they are compatible with the technologically mature complementary metal-oxide-semiconductor (CMOS) fabrication processes. This gives silicon-based optical waveguides superior performance to realize passive optical devices with different functions. ![]() Silicon, silicon dioxide, and silicon nitride are transparent in the 13 nm bands for standard communications and different material combinations can form high refractive index contrast to realize effective confinement of the optical mode field. In addition, the rapid development of silicon optical technology provides new opportunities for tunable semiconductor lasers. Integrated tunable semiconductor lasers have been receiving considerable attention as a research topic due to their small size, low cost, superior performance, and integrability. The production cost has been continuously reduced, which allowed large-scale production capacity. Like other optoelectronic devices, tunable lasers have known increasing development since their emergence. In addition, tunable lasers have important applications in the fields of spectroscopy, terahertz communication, and optical clocks. Moreover, tunable lasers can be used as a light source in gas detection to generate high-resolution characteristic absorption spectra of gases, thus improving the sensitivity of gas detection systems. Devices achieve over 70 nm wavelength tuning at over 30 mW of output power and show a high imaging speed at 800 kHz A-scan rates. The tunable lasers in the system are required to tune fast to realize a high imaging speed. This makes them extremely valuable in medical clinical diagnosis applications. Swept-source optical coherence tomography uses tunable lasers as light sources because they exhibit ultra-high-speed scanning, non-invasive imaging, high-resolution, and real-time imaging. As for a 20° scanning angle, the tuning range should be greater than 140 nm. A 15° scanning angle requires a laser wavelength tuning range of 100 nm. Tunable laser with output power of 20 mW, tuning range of 53 nm and linewidth of 100 kHz has been successful applied to an LIRDA system which achieves a scanning angle of 7°. All-solid-state LIDAR requires a widely tunable semiconductor laser source that can be integrated into the same chip as an optical phased array, given that a wide tuning range ensures a large angle scan in the longitudinal direction. Tunable semiconductor lasers are also indispensable in the field of sensing, and light detection and ranging (LIDAR), especially optical phased array-based LIDAR, is currently being actively studied. Due to the lack of frequency sources, the demand for tunable semiconductor lasers in ultra-DWDM systems will continue to increase. For example, for a system with 96 channels and 50 GHz channel spacing, 38 nm wavelength tuning range is needed and the linewidth is in the order of 100 kHz. Tunable semiconductor lasers are vital light source devices in a DWDM system. For example, to satisfy high-speed and capacity communication requirements, dense wavelength division multiplexing (DWDM) is currently one of the most effective technologies in core and optical access networks. ![]() Tunable semiconductor lasers are indispensable and important components in many fields because they are small, light, integrable, and tunable to different lasing wavelengths, which makes such lasers suitable for a broad range of functions. ![]()
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